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| DC COMPONENTS CO., LTD. R TIP32C DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) .185(4.70) .173(4.40) .151 Typ .055(1.39) (3.83) .045(1.15) .295(7.49) .220(5.58) .625(15.87) .570(14.48) Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25 C) Total Power Dissipation Junction Temperature Storage Temperature o o C) Rating -100 -100 -5 -3 40 2 +150 -55 to +150 Unit V V V A W W o o Symbol VCBO VCEO VEBO IC PD PD TJ TSTG .350(8.90) .330(8.38) 123 .640 Typ (16.25) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO ICES ICEO IEBO VCE(sat) VBE(on) hFE1 hFE2 fT 380s, Duty Cycle 2% (1) Min -100 -100 25 10 3 Typ - Max -200 -300 -1 -1.2 -1.8 50 - Unit V V A A mA V V MHz Test Conditions IC=-1mA, IE=0 IC=-30mA, IB=0 VCE=-100V VCE=-60V VEB=-5V IC=-3A, IB=-375mA IC=-3A, VCE=-4V IC=-1A, VCE=-4V IC=-3A, VCE=-4V IC=-0.5A, VCE=-10V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain (1) Transition Frequency (1)Pulse Test: Pulse Width |
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